Issue 5, 2011

Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

Abstract

A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV's was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering.

Graphical abstract: Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

Supplementary files

Article information

Article type
Paper
Submitted
31 Jul 2010
Accepted
01 Sep 2010
First published
30 Sep 2010

J. Mater. Chem., 2011,21, 1537-1543

Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

R. Mondal, S. Ko, E. Verploegen, H. A. Becerril, M. F. Toney and Z. Bao, J. Mater. Chem., 2011, 21, 1537 DOI: 10.1039/C0JM02491K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements