Issue 34, 2016

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Abstract

Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>103) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

Graphical abstract: Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Supplementary files

Article information

Article type
Paper
Submitted
10 Mar 2016
Accepted
08 Jul 2016
First published
11 Jul 2016

Nanoscale, 2016,8, 15629-15636

Author version available

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Q. Luo, X. Xu, H. Liu, H. Lv, T. Gong, S. Long, Q. Liu, H. Sun, W. Banerjee, L. Li, J. Gao, N. Lu and M. Liu, Nanoscale, 2016, 8, 15629 DOI: 10.1039/C6NR02029A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements