Issue 19, 2017, Issue in Progress

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Abstract

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (VSET and VRESET) and currents (ION and IOFF) were remarkably decreased, in which the IOFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored.

Graphical abstract: Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Article information

Article type
Paper
Submitted
25 Jan 2017
Accepted
30 Jan 2017
First published
15 Feb 2017
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2017,7, 11585-11590

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

C. Ye, J. Wu, C. Pan, T. Tsai, K. Chang, H. Wu, N. Deng and H. Qian, RSC Adv., 2017, 7, 11585 DOI: 10.1039/C7RA01104K

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements