Issue 44, 2017

A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors

Abstract

Solution-processed organic semiconductors enable the fabrication of large-area and flexible electronics by means of cost-effective, solution-based mass manufacturing techniques. However, for many applications an insoluble active layer can offer technological advantages in terms of robustness to processing solvents. This is particularly relevant in field-effect transistors (FETs), where processing of dielectrics or barriers from solution on top of the semiconductor layer typically imposes the use of orthogonal solvents in order not to interfere with the nanometer thick accumulation channel. To this end, the use of latent pigments, highly soluble molecules which can produce insoluble films after a post-deposition thermal cleavage of solubilizing groups, is a very promising strategy. In this contribution, we demonstrate the use of tert-butyloxycarbonyl (t-Boc) functionalized diketopyrrolopyrrole and perylene-diimide small molecules for good hole and electron transporting films. t-Boc thermal cleavage leads to densification of the films, along with a strong structural rearrangement of the deprotected molecules, strongly improving charge mobility in both p- and n-type FETs. We also highlight the robustness of these highly insoluble semiconducting layers to typical and aggressive processing solvents. These results can greatly enhance the degree of freedom in the manufacturing of multi-layered organic electronic devices, offering enhanced stability to harsh processing steps.

Graphical abstract: A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors

Supplementary files

Article information

Article type
Paper
Submitted
29 Aug 2017
Accepted
09 Oct 2017
First published
13 Oct 2017

J. Mater. Chem. C, 2017,5, 11522-11531

A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors

I. Maqueira-Albo, G. Ernesto Bonacchini, G. Dell'Erba, G. Pace, M. Sassi, M. Rooney, R. Resel, L. Beverina and M. Caironi, J. Mater. Chem. C, 2017, 5, 11522 DOI: 10.1039/C7TC03938G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements