Issue 45, 2018

A novel Cs2NbOF5:Mn4+ oxyfluoride red phosphor for light-emitting diode devices

Abstract

The addition of a red-emitting phosphor to YAG:Ce3+-based white light-emitting diodes (WLEDs) greatly facilitates their applications in the field of high-color-rendering-index warm solid-state lighting. It is highly desirable to develop a red phosphor with satisfactory spectral features and low synthesis cost. In this study, a novel non-rare-earth and nonequivalent doping type of Cs2NbOF5:Mn4+ oxyfluoride red-emitting phosphor with high luminous efficiency was obtained via a facile room-temperature co-precipitation method, and its morphology and luminescent properties were investigated in detail. The Cs2NbOF5:Mn4+ phosphor with micro-rod-like morphology exhibited broad band absorption at blue light region (∼474 nm) and narrow bandwidth emissions at red region (∼633 nm). The color purity of the Cs2NbOF5:Mn4+ phosphor was calculated to be about 99%, and the internal quantum yield (QY) under 474 nm excitation was 63.4%. The concentration quenching of Mn4+ in Cs2NbOF5 matrix was mainly due to dipole–dipole interactions, and the activation energy of temperature quenching was calculated to be ∼0.2610 eV. The demonstration of a blue InGaN LED chip in combination with a blend of newly developed Cs2NbOF5:Mn4+ red phosphor and YAG:Ce3+ yellow phosphor greatly decreased the correlated color temperature (CCT) from 6255 to 3517 K while significantly improving the color rendering index (CRI) from 72.5 to 87.5. It deserves to be mentioned that the brand-new matrix to phosphor in the present study can be extended to various niobium/tantalum oxyfluoride series, which is very helpful for developing and designing new red phosphors.

Graphical abstract: A novel Cs2NbOF5:Mn4+ oxyfluoride red phosphor for light-emitting diode devices

Article information

Article type
Paper
Submitted
10 Jul 2018
Accepted
28 Aug 2018
First published
29 Aug 2018

Dalton Trans., 2018,47, 16048-16056

A novel Cs2NbOF5:Mn4+ oxyfluoride red phosphor for light-emitting diode devices

H. Ming, J. Zhang, L. Liu, J. Peng, F. Du, X. Ye, Y. Yang and H. Nie, Dalton Trans., 2018, 47, 16048 DOI: 10.1039/C8DT02817F

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