Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs

Raihana Begum; Xin Yu Chin; Mingjie Li; Bahulayan Damodaran; Tze Chien Sum; Subodh Mhaisalkar; Nripan Mathews

doi:10.1039/C9CC01526D

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Stable Sn²⁺ doped FAPbI₃ nanocrystals for near-infrared LEDs†

Raihana Begum,

^a Xin Yu Chin,^a Mingjie Li,^b Bahulayan Damodaran,

^a Tze Chien Sum,

^b Subodh Mhaisalkar

^ac and Nripan Mathews

*^ac

Author affiliations

* Corresponding authors

^a Energy Research Institute@NTU (ERI@N), Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, Singapore
E-mail: Nripan@ntu.edu.sg

^b Department of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, SPMS-PAP 03-05, Singapore

^c School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore

Abstract

Herein, we report Sn²⁺ doping in FAPbI₃ NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn²⁺ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI₃ NCs in near-infrared (NIR) LEDs.

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Article information

DOI: https://doi.org/10.1039/C9CC01526D
Article type: Communication
Submitted: 23 Feb 2019
Accepted: 09 Apr 2019
First published: 09 Apr 2019

Download Citation

Chem. Commun., 2019,55, 5451-5454

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Stable Sn²⁺ doped FAPbI₃ nanocrystals for near-infrared LEDs

R. Begum, X. Y. Chin, M. Li, B. Damodaran, T. C. Sum, S. Mhaisalkar and N. Mathews, Chem. Commun., 2019, 55, 5451 DOI: 10.1039/C9CC01526D

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