Issue 43, 2020, Issue in Progress

Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Abstract

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (VON) of 1.2 V and a threshold voltage (VT) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7–9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.

Graphical abstract: Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Supplementary files

Article information

Article type
Paper
Submitted
19 May 2020
Accepted
23 Jun 2020
First published
06 Jul 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 25540-25546

Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

F. Cheng, E. Verrelli, F. A. Alharthi, S. Das, T. D. Anthopoulos, K. T. Lai, N. T. Kemp, M. O'Neill and S. M. Kelly, RSC Adv., 2020, 10, 25540 DOI: 10.1039/D0RA04445H

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