Issue 1, 2021

Boosting the sodium storage of the 1T/2H MoS2@SnO2 heterostructure via a fast surface redox reaction

Abstract

The sluggish kinetics and large volume expansion arising from the large ionic radius of Na+ remain elusive weaknesses of sodium ion batteries (SIBs). Here, we report a transition from bulk diffusion to surface-dominant pseudocapacitive charge storage by nanoscaling and heterostructuring, which enables fast and stable charge storage kinetics for SIBs. An electronic attraction induced self-assembly strategy was developed for the synthesis of the 1T/2H MoS2@SnO2 heterostructure. Ultrasmall SnO2 nanoparticles with a low crystallinity were uniformly distributed on the basal plane of MoS2. The intercalated SnO2 serves as an interfacial pillar to restrict the restacking of MoS2 nanosheets, whereas dual-phase 1T/2H MoS2 provides a continuous network for efficient charge transfer and restrains the aggregation of NaxSn. As a result, the 1T/2H MoS2@SnO2 heterostructure exhibits a higher specific capacity (626 mA h g−1 at 0.1 A g−1), and superior cycling and rate capabilities (262 mA h g−1 at 2 A g−1 for 500 cycles) compared to the raw MoS2 and 2H MoS2@SnO2 counterparts. Electrochemical kinetics analyses reveal that the charge transfer kinetics are boosted by the synergistic effect between the 1T/2H MoS2 and SnO2 nanoparticles. Quantitative examination into the origin demonstrated that the Na+ storage is dominated by the fast surface redox reaction, which endows the heterostructure with a durable high rate capability.

Graphical abstract: Boosting the sodium storage of the 1T/2H MoS2@SnO2 heterostructure via a fast surface redox reaction

Supplementary files

Article information

Article type
Paper
Submitted
04 Sep 2020
Accepted
26 Nov 2020
First published
07 Dec 2020

J. Mater. Chem. A, 2021,9, 463-471

Boosting the sodium storage of the 1T/2H MoS2@SnO2 heterostructure via a fast surface redox reaction

D. Gui, Z. Wei, J. Chen, L. Yan, J. Li, P. Zhang and C. Zhao, J. Mater. Chem. A, 2021, 9, 463 DOI: 10.1039/D0TA08711D

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