Issue 6, 2021

Scalable fluid-spinning nanowire-based inorganic semiconductor yarns for electrochromic actuators

Abstract

Semiconductor yarns with unique functional characteristics have great potential applications in next-generation electronic devices. However, scalable inorganic semiconductor yarns with excellent mechanical and electrical properties, and environmental stability have not been discovered. In this study, we explored a unique fluid-spinning strategy to obtain a series of scalable inorganic semiconductor yarns including neat and hybrid semiconductor yarns. Different from the conventional yarn spinning strategy through a mechanical motor, we utilized the fluid force from the triple-phase interface to assemble and twist inorganic nanofiber building blocks simultaneously, and eventually obtained highly oriented inorganic nanowire-based semiconductor yarns. The obtained semiconductor yarns showed an excellent flexibility (curvature exceeding 2 cm−1) and mechanical strength (tensile strength of 443 MPa) because of their highly oriented hierarchical nanostructures, which make them coiling able with highly twisted insertion. Additionally, coiled yarns were obtained by combining the host core material and functional guest sheath in a fluid-spinning process, which are flexible in deep cryogenic temperature owing to the pure inorganic building blocks (26.28% tensile strain in liquid nitrogen). In particular, inorganic yarn-based electrochromic actuators can obtain as high as 15.3% tensile stroke and 0.82 J g−1 work capacity by electrochemical charge injection-associated multicolor switching.

Graphical abstract: Scalable fluid-spinning nanowire-based inorganic semiconductor yarns for electrochromic actuators

Supplementary files

Article information

Article type
Communication
Submitted
25 Jan 2021
Accepted
08 Apr 2021
First published
09 Apr 2021

Mater. Horiz., 2021,8, 1711-1721

Scalable fluid-spinning nanowire-based inorganic semiconductor yarns for electrochromic actuators

L. Li, K. Wang, H. Fan, X. Zhu, J. Mu, H. Yu, Q. Zhang, Y. Li, C. Hou and H. Wang, Mater. Horiz., 2021, 8, 1711 DOI: 10.1039/D1MH00135C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements