Issue 8, 2022, Issue in Progress

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Abstract

We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.

Graphical abstract: Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Article information

Article type
Paper
Submitted
31 Oct 2021
Accepted
25 Jan 2022
First published
07 Feb 2022
This article is Open Access
Creative Commons BY license

RSC Adv., 2022,12, 4648-4655

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

A. Shushanian, D. Iida, Z. Zhuang, Y. Han and K. Ohkawa, RSC Adv., 2022, 12, 4648 DOI: 10.1039/D1RA07992A

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