Short-wave infrared sensitive broadband photodetectors based on an HgTe quantum dot film

Abstract

Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.