Issue 39, 2023

Se-doping-induced sulfur vacancy engineering of CuCo2S4 nanosheets for enhanced electrocatalytic overall water splitting

Abstract

The coordination of the electronic structure and charge transfer through heteroatomic doping and sulfur vacancies is one of the most vital strategies for enhancing the electrocatalytic performance of the oxygen and hydrogen evolution reactions (OER, HER) through water splitting. Se-doped CuCo2S4 nanosheets (CuCo2S3.68Se0.32) with abundant sulfur vacancies were synthesized via a simple hydrothermal method to achieve remarkably efficient electrocatalytic water splitting. Importantly, incorporating Se in three-dimensional nanosheet structures effectively fine-tunes the electronic structure, ensuring ample accessibility of active sites for swift charge carrier transfer and improved reaction kinetics. The optimized CuCo2S3.68Se0.32 offers substantially high electrocatalytic activity with overpotentials of 65 and 230 mV at the current density of 10 mA cm−2 for HER and OER, respectively, which is comparable to commercial catalysts. Combining Se-doping and rich sulfur vacancies facilitates fast charge transport, thus significantly boosting the electrocatalytic activity. Furthermore, utilizing CuCo2S3.68Se0.32 as both the cathode and anode, a two-electrode electrolyser exhibits remarkable performance. It achieves a low voltage of 1.52 V at 10 mA cm−2 and demonstrates exceptional durability over time. This study investigates the significance of doping and vacancies in enhancing electrocatalytic activity for water splitting.

Graphical abstract: Se-doping-induced sulfur vacancy engineering of CuCo2S4 nanosheets for enhanced electrocatalytic overall water splitting

Supplementary files

Article information

Article type
Paper
Submitted
24 Jul 2023
Accepted
07 Sep 2023
First published
02 Oct 2023

Nanoscale, 2023,15, 16199-16208

Se-doping-induced sulfur vacancy engineering of CuCo2S4 nanosheets for enhanced electrocatalytic overall water splitting

B. Zhang, X. Qian, H. Xu, L. Jiang, J. Xia, H. Chen and G. He, Nanoscale, 2023, 15, 16199 DOI: 10.1039/D3NR03609J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements