Issue 6, 2008

Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

Abstract

Nanowire field effect transistors (nano-FET) were lithographically fabricated using 50 nm doped polysilicon nanowires attached to two small gold terminals separated from each other by a ∼150 nm gap to serve as the basis for electronic detection of bacteria toxins. The device characterizations, semiconducting properties and use in a robust and sensitive bio-molecular detection sensor of bacterial toxins were reported in this work. The device characteristics were demonstrated with varying gate and drain voltages. The bio-molecular detection was demonstrated using electrochemical impedance spectroscopy (EIS), using Staphylococcus aureus Enterotoxin B (SEB) as the target molecule. The detection limit of SEB was observed in the range of 10–35 fM.

Graphical abstract: Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

Article information

Article type
Communication
Submitted
05 Feb 2008
Accepted
23 Apr 2008
First published
29 Apr 2008

Lab Chip, 2008,8, 868-871

Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

N. N. Mishra, W. C. Maki, E. Cameron, R. Nelson, P. Winterrowd, S. K. Rastogi, B. Filanoski and G. K. Maki, Lab Chip, 2008, 8, 868 DOI: 10.1039/B802036A

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