Issue 13, 2010

Solvent vapor annealing of an insoluble molecular semiconductor

Abstract

Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film—pentacene on SiO2 exposed to acetone vapor—using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid–solid transition without noticeable swelling, dissolving or melting of the molecular material.

Graphical abstract: Solvent vapor annealing of an insoluble molecular semiconductor

Article information

Article type
Paper
Submitted
06 Nov 2009
Accepted
15 Jan 2010
First published
19 Feb 2010

J. Mater. Chem., 2010,20, 2623-2629

Solvent vapor annealing of an insoluble molecular semiconductor

A. Amassian, V. A. Pozdin, R. Li, Detlef-M. Smilgies and G. G. Malliaras, J. Mater. Chem., 2010, 20, 2623 DOI: 10.1039/B923375J

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