Issue 36, 2010

(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium

Abstract

Iridium thin films were grown by atomic layer deposition (ALD) between 225 and 350 °C using (MeCp)Ir(CHD) (MeCp = methylcyclopentadienyl, CHD = cyclohexadiene) and molecular oxygen as precursors. (MeCp)Ir(CHD) precursor was synthesized and characterized in-house. Also the crystal structure of (MeCp)Ir(CHD) is reported. All the ALD grown Ir films passed a common tape test indicating a good adhesion on Al2O3 nucleation layer. Quite untypically, surface roughness was the highest on films deposited at 225–250 °C and decreased strongly by increasing deposition temperature. Partial decomposition of the (MeCp)Ir(CHD) precursor resulted in defects on the film surface at 350 °C. Ir thin films with good quality were obtained at the deposition temperatures of 275 and 300 °C. A 50 nm thick film grown at 275 °C had a roughness of 1.2 nm, contained about 3 at% oxygen, 0.6 at% carbon and 1.6 at% hydrogen impurities, while the resistivity was as low as 9 µΩ cm.

Graphical abstract: (MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium

Supplementary files

Article information

Article type
Paper
Submitted
23 Feb 2010
Accepted
30 Jun 2010
First published
05 Aug 2010

J. Mater. Chem., 2010,20, 7669-7675

(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium

J. Hämäläinen, T. Hatanpää, E. Puukilainen, L. Costelle, T. Pilvi, M. Ritala and M. Leskelä, J. Mater. Chem., 2010, 20, 7669 DOI: 10.1039/C0JM00486C

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