Issue 48, 2012

Vacuum thermally evaporated polymeric zinc acrylate as an organic interlayer of organic/inorganic multilayer passivation for flexible organic thin-film transistors

Abstract

Polymeric zinc acrylate (pZA) was introduced as an organic interlayer for the inorganic/organic multilayer passivation of flexible organic thin film transistors (OTFTs). The pZA film was deposited by thermally evaporating a zinc diacrylate (ZDA) monomer under high vacuum (<10−5 Torr) and applying UV irradiation. The conversion of ZDA into a polymeric phase was confirmed by FTIR analysis, breakdown voltage measurements and the photopatternability of the film before and after UV irradiation. Vacuum-thermally evaporated pZA film showed good surface smoothness and a high permeation activation energy (53 kJ mol−1) compared to conventional polymeric films. As an interlayer for multilayer passivation, vacuum-thermally evaporated silicon monoxide (SiO) was introduced as the inorganic counterpart of the pZA interlayer. A multilayer film comprising 6.5 pairs of layers showed a water vapor transmission rate (WVTR) of 0.055 g m−2 per day, a 25-fold improvement over the WVTR of a single SiO film (1.207 g m−2 per day). OTFTs encapsulated with 6.5 pairs of polymeric zinc acrylate/silicon monoxide layers showed prolonged stability over 97 days. In addition, the passivation layer did not show crack formation, and sustained barrier characteristics, even after 500 bending tests.

Graphical abstract: Vacuum thermally evaporated polymeric zinc acrylate as an organic interlayer of organic/inorganic multilayer passivation for flexible organic thin-film transistors

Article information

Article type
Paper
Submitted
19 Jul 2012
Accepted
25 Oct 2012
First published
02 Nov 2012

J. Mater. Chem., 2012,22, 25395-25401

Vacuum thermally evaporated polymeric zinc acrylate as an organic interlayer of organic/inorganic multilayer passivation for flexible organic thin-film transistors

W. M. Yun, J. Jang, S. Nam, Y. J. Jeong, L. H. Kim, S. Park, S. J. Seo and C. E. Park, J. Mater. Chem., 2012, 22, 25395 DOI: 10.1039/C2JM34760A

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