Issue 10, 2013
From the journal:

RSC Advances

Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Liancheng Wang,a   Yiyun Zhang,a   Xiao Li,b   Enqing Guo,a   Zhiqiang Liu,a   Xiaoyan Yi,*a   Hongwei Zhu*bc  and  Guohong Wanga  

* Corresponding authors

a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
E-mail: spring@semi.ac.cn

b Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing, 100084, P. R. China
E-mail: hongweizhu@tsinghua.edu.cn

c Center for Nano and Micro Mechanics (CNMM), Tsinghua University, Beijing, 100084, P. R. China

Abstract

Electrical characteristics of p-, n-GaN/graphene junctions before and after nitric acid doping have been investigated. Acid treatment can significantly improve the junction conductance in both cases, which is advantageous for the light emitting diode (LED) to reduce the operating voltage. GaN-based vertical LEDs incorporating graphene as transparent electrodes are further assembled and tested, showing significant improvement in forward electrical characteristics and light output power upon acid modification.

Graphical abstract: Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

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Article information

DOI
https://doi.org/10.1039/C2RA22170E
Article type
Paper
Submitted
15 Sep 2012
Accepted
20 Dec 2012
First published
04 Jan 2013

RSC Adv., 2013,3, 3359-3364

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Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

L. Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi, H. Zhu and G. Wang, RSC Adv., 2013, 3, 3359 DOI: 10.1039/C2RA22170E

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