Issue 44, 2016

The quest towards epitaxial BaMgF4 thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films

Abstract

Conventional and Pulsed Liquid Injection MOCVD processes (C-MOCVD and PLI-MOCVD) have been explored as synthetic routes for the growth of BaMgF4 on Si (100) and single crystalline SrTiO3 (100) substrates. For the two applied approaches, the volatile, thermally stable β-diketonate complexes Ba(hfa)2tetraglyme and Mg(hfa)2(diglyme)2(H2O)2 have been used as single precursors (C-MOCVD) or as a solution multimetal source (PLI-MOCVD). Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial BaMgF4 films on SrTiO3 substrates. Energy dispersive X-ray (EDX) analyses have been used to confirm composition and purity of deposited films. The impact of process parameters on film properties has been addressed, highlighting the strong influence of precursor ratio, deposition temperature and oxygen partial pressure on composition, microstructure and morphology of the films. Both methods appear well suited for the growth of the BaMgF4 phase, but while PLI-MOCVD yields a more straightforward control of the precursor composition that reflects on film stoichiometry, C-MOCVD provides easier control of the degree of texturing as a function of temperature.

Graphical abstract: The quest towards epitaxial BaMgF4 thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films

Supplementary files

Article information

Article type
Paper
Submitted
01 Aug 2016
Accepted
15 Oct 2016
First published
17 Oct 2016

Dalton Trans., 2016,45, 17833-17842

The quest towards epitaxial BaMgF4 thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films

S. Battiato, J. Deschanvres, H. Roussel, L. Rapenne, B. Doisneau, G. G. Condorelli, D. Muñoz-Rojas, C. Jiménez and G. Malandrino, Dalton Trans., 2016, 45, 17833 DOI: 10.1039/C6DT03055F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements