Issue 32, 2017, Issue in Progress

Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer

Abstract

The immobilization of glucose oxidase (GOx) on indium-gallium zinc oxide (IGZO) thin films is studied in order to fabricate a high performance biosensor. An amine functionalized layer, using (3-aminopropyl)triethoxysilane (APTES), is employed to support the immobilization and to achieve a qualified silanization layer. Fourier Transform Infrared (FT-IR) Spectroscopy, Atomic Force Microscopy (AFM), and contact angle measurements were performed to analyze the surface characteristics and to investigate a deposition mechanism for APTES with varying concentrations. Finally, GOx is immobilized on the APTES layer to determine how a diverse surface quality influences GOx density, and its enzymatic activity is identified by the detection of the electrical signal from glucose biosensors.

Graphical abstract: Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer

Supplementary files

Article information

Article type
Paper
Submitted
08 Feb 2017
Accepted
27 Mar 2017
First published
03 Apr 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 19656-19661

Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer

H. Kim and J. Kwon, RSC Adv., 2017, 7, 19656 DOI: 10.1039/C7RA01615H

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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