Issue 9, 2020

Mechanical properties of tantalum carbide from high-pressure/high-temperature synthesis and first-principles calculations

Abstract

As a member of the refractory metal carbide family of materials, TaC is a promising candidate for ultra-high temperature ceramics (UHTC) with desirable mechanical strength. TaC sample quality and therefore mechanical properties are strongly dependent on synthesis method, and atomistic origins of mechanical failure are difficult to assign. Here, we have successfully synthesized high quality densified TaC samples at 5.5 GPa and 1400 °C using the high pressure and high temperature (HPHT) sintering method, with Vickers hardness determined to be 20.9 GPa. First-principles calculations based on the recently developed strain–stress method show that the ideal indentation strength of TaC is about 23.3 GPa in the (1[1 with combining macron]0)[001] direction, in excellent agreement with experimental results. The detailed indentation shear deformation analysis and structural snapshots from the calculations indicate that the slip dislocations of TaC layers are the main structural deformation mode during the Vickers indentation process, and that the strong directional Ta–C bonds are responsible for the high mechanical strength of TaC. HPHT synthesis is shown to produce TaC samples with superior strength, and together with accurate first-principles calculations offers crucial insights for rational design and synthesis of novel and advanced UHTC materials.

Graphical abstract: Mechanical properties of tantalum carbide from high-pressure/high-temperature synthesis and first-principles calculations

Supplementary files

Article information

Article type
Paper
Submitted
18 Dec 2019
Accepted
10 Feb 2020
First published
10 Feb 2020
This article is Open Access
Creative Commons BY-NC license

Phys. Chem. Chem. Phys., 2020,22, 5018-5023

Mechanical properties of tantalum carbide from high-pressure/high-temperature synthesis and first-principles calculations

W. Sun, X. Kuang, H. Liang, X. Xia, Z. Zhang, C. Lu and A. Hermann, Phys. Chem. Chem. Phys., 2020, 22, 5018 DOI: 10.1039/C9CP06819H

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements