Issue 12, 2019

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

Abstract

Nanostructured field effect transistor (FET) based sensors have emerged as a powerful bioanalytical technology. However, performance variations across multiple devices and between fabrication batches inevitably exist and present a significant challenge holding back the translation of this cutting-edge technology. We report an optimized and cost-effective fabrication process for high-performance indium oxide nanoribbon FET with a steep subthreshold swing of 80 mV per decade. Through systematic electrical characterizations of 57 indium oxide nanoribbon FETs from different batches, we demonstrate an optimal operation point within the subthreshold regime that mitigates the issue of device-to-device performance variation. A non-linear pH sensing of the fabricated indium oxide nanoribbon FETs is also presented.

Graphical abstract: High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

Supplementary files

Article information

Article type
Paper
Submitted
19 Sep 2019
Accepted
04 Nov 2019
First published
05 Nov 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2019,1, 4870-4877

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

T. T. T. Pham, D. P. Tran and B. Thierry, Nanoscale Adv., 2019, 1, 4870 DOI: 10.1039/C9NA00592G

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