Tin(IV) dopant removal through anti-solvent engineering enabling tin based perovskite solar cells with high charge carrier mobilities

R. M. I. Bandara; K. D. G. I. Jayawardena; S. O. Adeyemo; S. J. Hinder; J. A. Smith; H. M. Thirimanne; N. C. Wong; F. M. Amin; B. G. Freestone; A. J. Parnell; D. G. Lidzey; H. J. Joyce; R. A. Sporea; S. R. P. Silva

doi:10.1039/C9TC02003A

Tin(iv) dopant removal through anti-solvent engineering enabling tin based perovskite solar cells with high charge carrier mobilities†

R. M. I. Bandara,

^a K. D. G. I. Jayawardena,

^a S. O. Adeyemo,

^b S. J. Hinder,^c J. A. Smith,

^d H. M. Thirimanne,

^a N. C. Wong,^a F. M. Amin,^a B. G. Freestone,

^d A. J. Parnell,

^d D. G. Lidzey,

^d H. J. Joyce,

^b R. A. Sporea

^a and S. R. P. Silva

*^a

Author affiliations

* Corresponding authors

^a Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, UK
E-mail: s.silva@surrey.ac.uk

^b Division of Electrical Engineering, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, UK

^c The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford GU2 7XH, UK

^d Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, UK

Abstract

We report the need for careful selection of anti-solvents for Sn-based perovskite solar cells fabricated through the commonly used anti-solvent method, compared to their Pb-based counterparts. This, in combination with the film processing conditions used, enables the complete removal of unwanted Sn⁴⁺ dopants, through engineering the anti-solvent method for Sn-based perovskites. Using a Cs_0.05(FA_0.83MA_0.17)_0.95Pb_0.5Sn_0.5I₃ perovskite, charge carrier mobilities of 32 ± 3 cm² V⁻¹ s⁻¹ (the highest reported for such systems through the optical-pump terahertz probe technique) together with ∼28 mA cm⁻² short circuit current densities are achieved. A champion efficiency of 11.6% was obtained for solvent extraction using toluene (an 80% enhancement in efficiency compared to the other anti-solvents) which is further improved to 12.04% following optimised anti-solvent wash and thermal treatment. Our work highlights the importance of anti-solvents in managing defects for high efficiency low bandgap perovskite materials and develops the potential for all-perovskite tandem solar cells.

Journal of Materials Chemistry C

Tin(iv) dopant removal through anti-solvent engineering enabling tin based perovskite solar cells with high charge carrier mobilities†

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Tin(IV) dopant removal through anti-solvent engineering enabling tin based perovskite solar cells with high charge carrier mobilities

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