Volume 227, 2021

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Abstract

III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.

Graphical abstract: Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
12 Jan 2020
Accepted
22 Jan 2020
First published
16 Mar 2020
This article is Open Access
Creative Commons BY license

Faraday Discuss., 2021,227, 163-170

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

M. R. Molas, A. V. Tyurnina, V. Zólyomi, A. K. Ott, D. J. Terry, M. J. Hamer, C. Yelgel, A. Babiński, A. G. Nasibulin, A. C. Ferrari, V. I. Fal’ko and R. Gorbachev, Faraday Discuss., 2021, 227, 163 DOI: 10.1039/D0FD00007H

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