Issue 3, 2011

Density and aspect ratio controlled MgZnO nanowire arrays by spontaneous phase separation effect

Abstract

This study reports a simple method of controlling the density and aspect ratio of vertically arrayed ultra-slim MgZnO nanowires developed through the formation of selective crystalline seeds by metal–organic chemical vapour deposition at a high growth temperature. The thin multilayer structures with an amorphous MgO layer and amorphous and single crystal MgZnO layers developed by self-phase separation between the nanowires and substrates played a vital role in the growth of the MgZnO nanowires. The dimensional competition between the Zn-rich seed crystals and Mg-rich amorphous layers induced by spontaneous phase separation at different Mg fluxes determined the density and aspect ratio of the nanowires. Based on the thermodynamical calculations and microstructural characterizations, the growth procedure and models for the evolution of the ultra-slim nanowires on the Si substrates are proposed for different Mg flow rates.

Graphical abstract: Density and aspect ratio controlled MgZnO nanowire arrays by spontaneous phase separation effect

Article information

Article type
Paper
Submitted
20 Apr 2010
Accepted
21 Aug 2010
First published
06 Oct 2010

CrystEngComm, 2011,13, 813-818

Density and aspect ratio controlled MgZnO nanowire arrays by spontaneous phase separation effect

D. C. Kim, J. H. Lee, S. K. Mohanta, H. K. Cho, H. Kim and J. Y. Lee, CrystEngComm, 2011, 13, 813 DOI: 10.1039/C0CE00114G

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