Achieving single domain relaxor-PT crystals by high temperature poling

Abstract

Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In_0.5Nb_0.5)O₃–0.37Pb(Mg_1/3Nb_2/3)O₃–0.38PbTiO₃ (PIN–PMN–PT) crystals, the non-180° ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN–PMN–PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain–electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach.