A novel and high brightness AlN:Mn2+ red phosphor for field emission displays

Abstract

Mn²⁺ doped-AlN red phosphors were prepared by the solid-state reaction method. X-ray diffraction, SEM-EDS, photoluminescence and cathodoluminescence were utilized to characterize the prepared phosphor. Under UV light or electron beam excitation, the AlN:Mn²⁺ phosphors exhibit a strong red emission centered at 600 nm, which is ascribed to the characteristic ⁴T₁(⁴G)–⁶A₁(⁶S) transition of Mn²⁺. Energy level diagrams were constructed to discuss the photoluminescence and cathodoluminescence processes of the AlN:1% Mn²⁺ phosphor. The oxygen-related defects in AlN have great influence on the photoluminescence and cathodoluminescence properties of the AlN:1% Mn²⁺ phosphor. The dependence of brightness on accelerating voltage or electric current, the decay behavior of CL intensity under the electron bombardment, and the stability of CIE chromaticity coordinates were investigated in detail. The results indicate that the AlN:Mn²⁺ phosphor exhibits a higher brightness, higher color purity, and lower saturation compared to the red Y₂O₃:Eu³⁺ phosphor, which gives the AlN:Mn²⁺ phosphor great potential as a red phosphor for full color FEDs.