Issue 40, 2015

Development of high-performance printed organic field-effect transistors and integrated circuits

Abstract

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

Graphical abstract: Development of high-performance printed organic field-effect transistors and integrated circuits

Article information

Article type
Perspective
Submitted
02 Jun 2014
Accepted
15 Jul 2014
First published
24 Jul 2014

Phys. Chem. Chem. Phys., 2015,17, 26553-26574

Author version available

Development of high-performance printed organic field-effect transistors and integrated circuits

Y. Xu, C. Liu, D. Khim and Y. Noh, Phys. Chem. Chem. Phys., 2015, 17, 26553 DOI: 10.1039/C4CP02413C

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