Issue 13, 2014

Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices

Abstract

We present an asymmetrically-gated Graphene Self-Switching Diode (G-SSD) as a new negative differential resistance (NDR) device, and study its transport properties using nonequilibrium Green's function (NEGF) formalism and the Extended Huckel (EH) method. The device exhibits a new NDR mechanism, in which a very small quantum tunnelling current is used to control a much-larger channel conduction current, resulting in a very pronounced NDR effect. This NDR effect occurs at low bias voltages, below 1 V, and results in a very high current peak in the μA range and a high peak-to-valley current ratio (PVCR) of 40. The device has an atomically-thin structure with sub-10 nm dimensions, and does not require any doping or external gating. These results suggest that the device has promising potential in applications such as high frequency oscillators, memory devices, and fast switches.

Graphical abstract: Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices

Article information

Article type
Paper
Submitted
07 Jan 2014
Accepted
11 Apr 2014
First published
16 Apr 2014

Nanoscale, 2014,6, 7628-7634

Author version available

Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices

F. Al-Dirini, F. M. Hossain, A. Nirmalathas and E. Skafidas, Nanoscale, 2014, 6, 7628 DOI: 10.1039/C4NR00112E

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