Issue 13, 2011

Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility

Abstract

Organic single crystals with thickness ranging from a few monolayers to micrometres were fabricated by an “Organic Crystal Cleavage” method. The mobility slightly increased with decreased thickness and rose sharply when the crystal thickness was below some critical thickness. The gate induced charges in the field-effect transistor (FET) channel and in the vicinity of the metal–semiconductor interface reducing the contact barrier. The values of mobility measured on very thin crystals without the contact barrier precisely reflect the transport properties of organic semiconductors.

Graphical abstract: Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility

Article information

Article type
Communication
Submitted
15 Dec 2010
Accepted
24 Jan 2011
First published
18 Feb 2011

J. Mater. Chem., 2011,21, 4771-4773

Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility

H. Jiang, K. J. Tan, K. K. Zhang, X. Chen and C. Kloc, J. Mater. Chem., 2011, 21, 4771 DOI: 10.1039/C0JM04383D

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