Issue 10, 2011
From the journal:

CrystEngComm

Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts

J. Y. Zhang,a   Y. Lang,a   Z. Q. Chu,b   X. Liu,a   L. L. Wuc  and  X. T. Zhang*a  

* Corresponding authors

a Heilongjiang Province Key Lab for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, People's Republic of China
E-mail: xtzhangzhang@hotmail.com

b Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China

c Center for Engineering Training and Basic Experimentation, Heilongjiang Institute of Science and Technology, Harbin, People's Republic of China

Abstract

Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized viachemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)3 nanobelts could exist as SiZn as donor dopants, leading to a low resistivity of 6.25 × 10−3 Ω cm. The transport properties of the nanobelts were measured. A nonlinear I–V characteristic is found in a voltage span of 0.4–1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge.

Graphical abstract: Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts

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Article information

DOI
https://doi.org/10.1039/C1CE00004G
Article type
Paper
Submitted
03 Jan 2011
Accepted
24 Feb 2011
First published
22 Mar 2011

CrystEngComm, 2011,13, 3569-3572

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Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts

J. Y. Zhang, Y. Lang, Z. Q. Chu, X. Liu, L. L. Wu and X. T. Zhang, CrystEngComm, 2011, 13, 3569 DOI: 10.1039/C1CE00004G

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