Issue 38, 2013

The synthesis of monodispersed AgBiS2quantum dots with a giant dielectric constant

Abstract

Monodispersed AgBiS2 quantum dots of high phase purity with an average diameter of 8.5 ± 1.2 nm have been synthesized for the first time by a hot-injection method. The optical band gap of the well-dispersed quantum dots is ∼2.67 eV, indicating a strong quantum confinement. The quantum dot pellet shows a large dielectric constant of the order of 105. Independent measurements demonstrate that the large grain boundary resistance and capacitance contribute to the giant dielectric constant. Monodispersed AgBiS2 quantum dots may find significant implications in high-k applications.

Graphical abstract: The synthesis of monodispersed AgBiS2 quantum dots with a giant dielectric constant

Supplementary files

Article information

Article type
Communication
Submitted
03 Jul 2013
Accepted
02 Aug 2013
First published
05 Aug 2013

CrystEngComm, 2013,15, 7644-7648

The synthesis of monodispersed AgBiS2 quantum dots with a giant dielectric constant

C. Chen, X. Qiu, S. Ji, C. Jia and C. Ye, CrystEngComm, 2013, 15, 7644 DOI: 10.1039/C3CE41304G

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