Molecular design of dopant precursors for atomic layer epitaxy of SrS:Ce
Abstract
Two cerium compounds, Ce{N[Si(CH
3
)
3
]
2
}
3
and Ce(tmhd)
4
(tmhd=2,2,6,6-tetramethylheptane-3,5-dionate), have been evaluated for utilization in the preparation of thin films of SrS:Ce by atomic layer epitaxy (ALE). The resultant coatings have been characterized for use in electroluminescent (EL) devices. The observed emission maximum at 518 nm for the devices derived from Ce(tmhd)
4
shifts to 480 nm for those resulting from Ce{N[Si(CH
3
)
3
]
2
}
3
. This shift may be correlated with the basicity of the ligand present on the dopant element.
- This article is part of the themed collection: Solid state chemistry: Novel Syntheses and New Materials: Materials Discussion 1
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