Issue 2, 2001

Abstract

Novel, volatile (fluoroalkylthiolato)tin(IV) precursors have been synthesised and (CF3CH2S)4Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300–400 °C are composed of sulfur-deficient SnS2, films deposited at 450 and 500 °C comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 °C are sulfur-deficient SnS. The structure of [CF3(CF2)5CH2CH2S]4Sn is also reported.

Supplementary files

Article information

Article type
Paper
Submitted
20 Jul 2000
Accepted
20 Sep 2000
First published
16 Nov 2000

J. Mater. Chem., 2001,11, 469-473

Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

T. G. Hibbert, M. F. Mahon, K. C. Molloy, L. S. Price and I. P. Parkin, J. Mater. Chem., 2001, 11, 469 DOI: 10.1039/B005863G

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