Issue 2, 2001

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)4Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 °C the film deposited consists of mainly SnS2 while at 500 °C SnS is the dominant component. The mechanism of decomposition of (PhS)4Sn is discussed and the structure of the precursor presented.

Supplementary files

Article information

Article type
Paper
Submitted
20 Jul 2000
Accepted
20 Sep 2000
First published
16 Nov 2000

J. Mater. Chem., 2001,11, 464-468

Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G. Barone, T. G. Hibbert, M. F. Mahon, K. C. Molloy, L. S. Price, I. P. Parkin, A. M. E. Hardy and M. N. Field, J. Mater. Chem., 2001, 11, 464 DOI: 10.1039/B005888M

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