Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy

Kouji Omichi; Kazuhiko Kaiya; Naoyuki Takahashi; Takato Nakamura; Shinji Okamoto; Hajime Yamamoto

doi:10.1039/B006656G

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Kouji Omichi,^a Kazuhiko Kaiya,^a Naoyuki Takahashi,*^a Takato Nakamura,^a Shinji Okamoto^b and Hajime Yamamoto^c

Author affiliations

* Corresponding authors

^a Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatus, Shizuoka, Japan
E-mail: takanao@mat.eng.shizuoka.ac.jp

^b Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, Japan

^c Department of Engineering, Tokyo University of Technology, 1404, Katakura, Hachioji, Tokyo, Japan

Abstract

Atmospheric pressure vapor-phase epitaxy of ZnO thin films using ZnI₂ and O₂ as starting materials has been examined: thin films of ZnO deposited onto sapphire (0001) substrates at 1023 K have smooth surfaces free from cracks; the photoluminescence spectra of the ZnO thin film prepared under atmospheric pressure show for the first time an ultraviolet emission centered at 381.0 nm at room temperature.

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Article information

DOI: https://doi.org/10.1039/B006656G
Article type: Communication
Submitted: 15 Aug 2000
Accepted: 23 Oct 2000
First published: 20 Nov 2000

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J. Mater. Chem., 2001,11, 262-263

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