Issue 4, 2002
From the journal:

Journal of Materials Chemistry

A. A. Bosak,*ab   C. Dubourdieu,a   J.-P. Sénateur,a   O. Yu. Gorbenkob  and  A. R. Kaulb  

* Corresponding authors

a Laboratoire des Matériaux et du Génie Physique, INPG, St. Martin d'Hères, France

b Laboratory of Coordination Chemistry, Department of Chemistry, Moscow State University, Moscow, Russia
E-mail: bosak@inorg.chem.msu.ru

Abstract

Epitaxial thin films of RMnO3 (R = Sm, Eu, Gd, Dy) have been prepared using liquid injection MOCVD. The formation of a high-temperature hexagonal modification for DyMnO3 and bulk hexagonal EuMnO3 and GdMnO3, which does not exist for the bulk compounds, has been observed on ZrO2(Y2O3) (111) substrates at 900 °C due to epitaxial stabilization.

Graphical abstract: Epitaxial stabilization of hexagonal RMnO3 (R = Eu–Dy) manganites

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Article information

DOI
https://doi.org/10.1039/B110870K
Article type
Communication
Submitted
27 Nov 2001
Accepted
23 Jan 2002
First published
07 Feb 2002

J. Mater. Chem., 2002,12, 800-801

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Epitaxial stabilization of hexagonal RMnO3 (R = Eu–Dy) manganites

A. A. Bosak, C. Dubourdieu, J.-P. Sénateur, O. Yu. Gorbenko and A. R. Kaul, J. Mater. Chem., 2002, 12, 800 DOI: 10.1039/B110870K

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