Growth of lead chalcogenide thin films using single-source precursors

Abstract

A series of lead dithiocarbamato complexes, [Pb(S₂CNRR′)₂] (R = Me, Et; R′ = ⁱPr, ⁿBu) and dichalcogenoimidodiphoshanto complexes, [Pb((EPⁱPr₂)₂N)₂] (E = S, Se) have been synthesised and characterised. These compounds have been employed as single-source precursors for the growth of lead chalcogenide thin films by aerosol-assisted chemical vapour deposition (AACVD) and low-pressure metal–organic chemical vapour deposition (LP-MOCVD) on glass substrates. X-Ray powder diffraction (XRPD) studies show that the films are composed of cubic PbS/Se. The solid-state structures of the symmetrically substituted complexes, [Pb(S₂CNR₂)₂] (R = C₆H₁₀, C₅H₁₁), have been determined by single-crystal X-ray crystallography.