Issue 24, 2006

Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

Abstract

The synthesis and the electric properties of two new pyrene end-substituted oligothiophene derivatives (Py-nT, n = 2,4) are described. The highest hole mobility (ca. 10−3 cm2 V−1 s−1) was obtained for vacuum evaporated thin films of Py-4T as the active layer in field effect transistors based on hexamethyldisilazane-treated SiO2/Si substrates. Moreover, Py-nT thin films were doped with molecular iodine, which led to a 106 fold increase of electric conductivity. In the case of Py-4T, a value of 1 S cm−1 was obtained after 21 minutes exposure to iodine vapor.

Graphical abstract: Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

Article information

Article type
Paper
Submitted
09 Feb 2006
Accepted
05 Apr 2006
First published
03 May 2006

J. Mater. Chem., 2006,16, 2380-2386

Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

F. Moggia, C. Videlot-Ackermann, J. Ackermann, P. Raynal, H. Brisset and F. Fages, J. Mater. Chem., 2006, 16, 2380 DOI: 10.1039/B601870J

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