Issue 46, 2006
From the journal:

Journal of Materials Chemistry

Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3

Shivram S. Garje,a   May C. Copsey,b   Mohammad Afzaal,a   Paul O'Brien*a  and  Tristram Chiversb  

* Corresponding authors

a The School of Chemistry and The School of Materials, The University of Manchester, Oxford Road, Manchester, UK
E-mail: paul.obrien@manchester.ac.uk
Fax: +44 0161-275-4616
Tel: +44 0161-275-4652

b Department of Chemistry, University of Calgary, Calgary, AB, Canada

Abstract

Aerosol-assisted chemical vapour deposition (AACVD) studies using {M(μ-Te)[N(iPr2PTe)2]}3 (M = In, Ga) were carried out on glass and Si(100) substrates at deposition temperatures between 325–475 °C. Black, adherent films were obtained in all cases and characterized by XRD, SEM, EDAX and Raman spectroscopy. The indium precursor gave cubic In2Te3 exclusively, whereas the gallium complex generated a mixture of cubic Ga2Te3, monoclinic GaTe and hexagonal Te. Mass spectrometric studies indicate that fragmentation of the indium precursor to give In2Te3 is accompanied by the formation of In[N(iPr2PTe)2]2+ and [N(iPr2PTe)2]2−.

Graphical abstract: Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3

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Article information

DOI
https://doi.org/10.1039/B608700K
Article type
Paper
Submitted
20 Jun 2006
Accepted
08 Sep 2006
First published
10 Oct 2006

J. Mater. Chem., 2006,16, 4542-4547

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Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3

S. S. Garje, M. C. Copsey, M. Afzaal, P. O'Brien and T. Chivers, J. Mater. Chem., 2006, 16, 4542 DOI: 10.1039/B608700K

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