Issue 44, 2006
From the journal:

Journal of Materials Chemistry

Engineering of the electronic structure in an aromatic dithiol monomolecular organic insulator

Danqin Feng,a   Yaroslav Losovyj,b   Yian Tai,c   Michael Zharnikov*c  and  Peter Dowben*a  

* Corresponding authors

a Dept. of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0111, U.S.A
E-mail: pdowben@unlinfo.unl.edu
Fax: +1-402-472-2879
Tel: +1-402-472-9838

b Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA 70806, U.S.A

c Angewandte Physikalische Chemie, Universität Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany
E-mail: Michael.Zharnikov@urz.uni-heidelberg.de
Tel: +49-6221-544921

Abstract

Cross-linking, leading to an insulating quasi-polymeric material, occurs with the initial irradiation-induced modification in films of the monomolecular insulator (1,1′;4′,1″-terphenyl)-4,4″-dimethanethiol, although this is accompanied by a decrease in the gap between the highest occupied molecular orbital and lowest unoccupied molecular orbital.

Graphical abstract: Engineering of the electronic structure in an aromatic dithiol monomolecular organic insulator

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Article information

DOI
https://doi.org/10.1039/B609217A
Article type
Paper
Submitted
29 Jun 2006
Accepted
08 Sep 2006
First published
26 Sep 2006

J. Mater. Chem., 2006,16, 4343-4347

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Engineering of the electronic structure in an aromatic dithiol monomolecular organic insulator

D. Feng, Y. Losovyj, Y. Tai, M. Zharnikov and P. Dowben, J. Mater. Chem., 2006, 16, 4343 DOI: 10.1039/B609217A

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