Study of a novel ALD process for depositing MgF2 thin films

Abstract

Magnesium fluoride is an ultraviolet (UV) transparent material which is widely used in optical applications over a wide wavelength range. We have developed a novel atomic layer deposition (ALD) process for depositing magnesium fluoride thin films for the first time. MgF₂ films were grown at 250–400 °C using Mg(thd)₂ and TiF₄ as precursors. The crystallinity, morphology, composition, thicknesses and refractive indices of the films were analyzed by X-ray diffraction/reflection (XRD/XRR), transmission electron microscopy (TEM), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties were also measured. The growth rate was temperature dependent decreasing from 1.6 Å cycle⁻¹ at 250 °C to 0.7 Å cycle⁻¹ at 400 °C. The films were polycrystalline at 250–400 °C. The refractive indices were between 1.34–1.42 and the permittivity 4.9. The impurity levels were below 0.6 at.% in the films deposited at 350–400 °C.