Issue 37, 2008

Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

Abstract

Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol–gel route, show strong transient photocurrents under chopped sub-bandgap illumination ( = 1.8 eV < Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.

Graphical abstract: Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

Article information

Article type
Communication
Submitted
06 May 2008
Accepted
10 Jun 2008
First published
29 Jul 2008

Chem. Commun., 2008, 4454-4456

Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

B. Yang and V. Luca, Chem. Commun., 2008, 4454 DOI: 10.1039/B807629D

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