Issue 8, 2009

Sulfur-induced offsets in MC-ICP-MS silicon-isotope measurements

Abstract

Sample preparation methods for MC-ICP-MS silicon-isotope measurements often involve a cation-exchange purification step. A previous study has argued that this would suffice for geological materials, as the occasional enrichment of anionic species would not compromise silicon-isotope analysis. Here we report significant offsets in MC-ICP-MS silicon-isotope measurements induced by the presence of sulfur. We show that offsets in δ30Si become significant above SO4/Si ratios (wt.) of 0.02, reaching up to ca. +1.4‰ at SO4/Si ratios above ∼0.2. This finding is particularly relevant for studies of sulfur-rich waters and silicified rocks where alteration was accompanied by sulfur-enrichments. We propose an additional purification step to remove sulfur from solid sample material.

Graphical abstract: Sulfur-induced offsets in MC-ICP-MS silicon-isotope measurements

Article information

Article type
Technical Note
Submitted
26 Sep 2008
Accepted
28 Apr 2009
First published
26 May 2009

J. Anal. At. Spectrom., 2009,24, 1111-1114

Sulfur-induced offsets in MC-ICP-MS silicon-isotope measurements

S. H. J. M. van den Boorn, P. Z. Vroon and M. J. van Bergen, J. Anal. At. Spectrom., 2009, 24, 1111 DOI: 10.1039/B816804K

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