Issue 17, 2009

Electronic state of oxygen nonstoichiometric La2−xSrxNiO4+δ at high temperatures

Abstract

In order to elucidate the electronic state and the conduction mechanism of La2−xSrxNiO4+δ at high temperatures, electrical conductivity, Seebeck coefficient, and nonstoichiometric oxygen content of La2−xSrxNiO4+δ (x = 0, 0.2, 0.4) were measured as a function of Sr content, temperature, and oxygen partial pressure. The hole mobility is estimated from the electrical conductivity and oxygen content. The mobility decreases slightly as temperature increases, like metals at high temperatures. The relationships between Seebeck coefficient and electrical conductivity, and Seebeck coefficient and hole concentration can be explained by the metallic conduction model. Semi-quantitative analyses strongly indicate that electrons (holes) are itinerant in La2−xSrxNiO4+δ and the conduction mechanism of La2−xSrxNiO4+δ is metal-like band conduction at high temperatures. Based on the experimental results and discussions, a schematic of the energy levels and band structure is proposed. At high temperatures, metallic conduction is induced by a free hole in the σx2−y2 band composed of a dx2−y2 orbital.

Graphical abstract: Electronic state of oxygen nonstoichiometric La2−xSrxNiO4+δ at high temperatures

Article information

Article type
Paper
Submitted
07 Jan 2009
Accepted
25 Feb 2009
First published
18 Mar 2009

Phys. Chem. Chem. Phys., 2009,11, 3055-3062

Electronic state of oxygen nonstoichiometric La2−xSrxNiO4+δ at high temperatures

T. Nakamura, K. Yashiro, K. Sato and J. Mizusaki, Phys. Chem. Chem. Phys., 2009, 11, 3055 DOI: 10.1039/B823364K

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