Issue 1, 2010

All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

Abstract

The fabrication and characterisation of solution-processed, all-inorganic light-emitting devices incorporating colloidal CdSe/ZnS quantum dots are presented. Using sol–gel synthetic routes, highly luminescent core–shell QDs are embedded between spin-coated p-type NiO and n-type ZnO charge-transport layers. The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 249 cd m−2.

Graphical abstract: All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

Supplementary files

Article information

Article type
Paper
Submitted
16 Mar 2009
Accepted
30 Jun 2009
First published
05 Aug 2009

J. Mater. Chem., 2010,20, 167-172

All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

B. S. Mashford, T. Nguyen, G. J. Wilson and P. Mulvaney, J. Mater. Chem., 2010, 20, 167 DOI: 10.1039/B905256A

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