Issue 4, 2011

Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors

Abstract

The effects of electrical leakage and capacitance density were investigated in the low-voltage operated organic field-effect transistors (OFETs) by using a gate dielectric with a bi-layer structure of atomic layer deposited alumina (ALD-Al2O3) and high-k polymeric cyanoethylated pullulan (CEP) layer. A significant improvement in the device performance was achieved by compromising the two effects, suppressing the leakage current with ALD-Al2O3 dielectric and maintaining the high capacitance with high-k polymeric layer. With the optimized thickness of ∼5 nm alumina (Ci,CEP/Al2O3 ∼ 85 nF cm−2), a high mobility of ∼5 cm2 V−1s−1 and sharp subthreshold slope (SS) of 0.066 V dec−1 were obtained. The smoother surface of the polymeric dielectric surface enhanced the 2-dimensional vertical molecular layer growth and contributed to the better device performance.

Graphical abstract: Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors

Supplementary files

Article information

Article type
Paper
Submitted
25 Jul 2010
Accepted
04 Oct 2010
First published
12 Nov 2010

J. Mater. Chem., 2011,21, 998-1004

Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors

W. Xu and S. Rhee, J. Mater. Chem., 2011, 21, 998 DOI: 10.1039/C0JM02401E

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