High hole mobility of 1,2-bis[4′-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor

Zujin Zhao; Zhefeng Li; Jacky W. Y. Lam; Jose-Luis Maldonado; Gabriel Ramos-Ortiz; Yang Liu; Wangzhang Yuan; Jianbin Xu; Qian Miao; Ben Zhong Tang

doi:10.1039/C1CC12011E

High hole mobility of 1,2-bis[4′-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor†

Zujin Zhao,^ab Zhefeng Li,^c Jacky W. Y. Lam,^a Jose-Luis Maldonado,^d Gabriel Ramos-Ortiz,^d Yang Liu,^a Wangzhang Yuan,^a Jianbin Xu,^e Qian Miao*^c and Ben Zhong Tang*^a

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* Corresponding authors

^a Department of Chemistry, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong, China
E-mail: tangbenz@ust.hk

^b College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou 310036, China

^c Department of Chemistry, The Chinese University of Hong Kong, Shatin New Territories, Hong Kong, China
E-mail: miaoqian@cuhk.edu.hk

^d Centro de Investigaciones en Óptica, A.P. 1-948, 37000 León, Gto., México

^e Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin New Territories, Hong Kong, China

Abstract

Triphenylamine-functionalized tetraphenylethene shows aggregation-induced emission feature with unity solid-state fluorescence efficiency. Its amorphous film can function in a p-type FET device with field effect mobility up to 2.6 × 10⁻³ cm²/Vs.

Chemical Communications

High hole mobility of 1,2-bis[4′-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor†

Abstract

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High hole mobility of 1,2-bis[4′-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor

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