Issue 43, 2011
From the journal:

Chemical Communications

Piezoresistance behaviors of p-type 6H-SiC nanowires†

Fengmei Gao,a   Jinju Zheng,a   Mingfang Wang,a   Guodong Wei*a  and  Weiyou Yang*a  

* Corresponding authors

a Institute of Materials, Ningbo University of Technology, Ningbo City, P.R. China
E-mail: wgd588@163.com, weiyouyang@tsinghua.org.cn

Abstract

We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.

Graphical abstract: Piezoresistance behaviors of p-type 6H-SiC nanowires

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Article information

DOI
https://doi.org/10.1039/C1CC14343C
Article type
Communication
Submitted
19 Jul 2011
Accepted
20 Sep 2011
First published
30 Sep 2011

Chem. Commun., 2011,47, 11993-11995

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Piezoresistance behaviors of p-type 6H-SiC nanowires

F. Gao, J. Zheng, M. Wang, G. Wei and W. Yang, Chem. Commun., 2011, 47, 11993 DOI: 10.1039/C1CC14343C

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