Issue 33, 2011
From the journal:

Journal of Materials Chemistry

Low-temperature growth and characterization of ZnO thin films for flexible inverted organic solar cells

Kyung-Sik Shin,a   Hye-Jeong Park,a   Brijesh Kumar,a   Kyoung-Kook Kim,b   Soo-Ghang Ihnc  and  Sang-Woo Kim*ad  

* Corresponding authors

a School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
E-mail: kimsw1@skku.edu
Fax: +82-31-290-7381

b Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi, Republic of Korea

c Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Yongin, Republic of Korea

d SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, Republic of Korea

Abstract

Flexible inverted organic solar cells (IOSCs) with a zinc oxide (ZnO) thin film layer acting as an effective electron transport layer and a low reflective light absorber were fabricated in this study. The high quality ZnO thin films on flexible indium tin oxide-coated polyethersulfone (PES) substrates were grown in a non-vacuum process using mist pyrolysis chemical vapor deposition at a low temperature of 180 °C without any thermal damage to the PES substrate. The power conversion efficiency of the flexible IOSCs with ZnO thin films averaged 3.1% at a simulated air-mass of 1.5 global full-sun (100 mW cm−2) illumination, which was greater than that of flexible IOSCs with a ZnO thin film formed using a sol–gel method (approximately 2.3%).

Graphical abstract: Low-temperature growth and characterization of ZnO thin films for flexible inverted organic solar cells

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Article information

DOI
https://doi.org/10.1039/C1JM10914F
Article type
Paper
Submitted
02 Mar 2011
Accepted
04 May 2011
First published
17 Jun 2011

J. Mater. Chem., 2011,21, 12274-12279

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Low-temperature growth and characterization of ZnO thin films for flexible inverted organic solar cells

K. Shin, H. Park, B. Kumar, K. Kim, S. Ihn and S. Kim, J. Mater. Chem., 2011, 21, 12274 DOI: 10.1039/C1JM10914F

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