Issue 25, 2011
From the journal:

Journal of Materials Chemistry

Solution processed non-volatile top-gate polymer field-effect transistors†

Wei Lin Leong,‡a   Nripan Mathews,*a   Bertha Tan,b   Subramanian Vaidyanathan,b   Florian Dötzb  and  Subodh Mhaisalkara  

* Corresponding authors

a School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
E-mail: Nripan@ntu.edu.sg

b BASF Global Research Center Singapore, Science Park Road 61, Singapore, Singapore

Abstract

This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on–off ratios close to 103 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.

Graphical abstract: Solution processed non-volatile top-gate polymer field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C1JM10966A
Article type
Communication
Submitted
06 Mar 2011
Accepted
26 Apr 2011
First published
24 May 2011

J. Mater. Chem., 2011,21, 8971-8974

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Solution processed non-volatile top-gate polymer field-effect transistors

W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dötz and S. Mhaisalkar, J. Mater. Chem., 2011, 21, 8971 DOI: 10.1039/C1JM10966A

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